Sensors, MEMS, Electronics – Page 49

A Physics Based Potential Model for Cylindrical Surrounding Gate MOSFETs with SiO2- Core Si-Shell Structure

Zhang X., He J., Chan M., Du C., Ye Y., Zhao W., Wu W., Wang W., PKU-HKUST Shenzhen-Hongkong Institution, CN

A physics based potential model for intrinsic long-channel cylindrical surrounding gate MOSFETs with SiO2 -core Si-Shell structure is presented in this paper. The accurate potential solution of Poisson’s equation in a cylindrical coordinate system is [...]

NQS Modeling of independent DG MOSFET using RTA Approach

Sharan N., Mahapatra S., Indian Institute of Science, IN

We propose a new set of Relaxation Time Approximation (RTA) based Non Quasi Static (NQS) model for independent double gate MOSFETs by taking into account the fact that any gate can be the dominant gate. [...]

InGaAs FinFET Modeling Using Industry Standard Compact Model BSIM-CMG

Khandelwal S., Duarte J.P., Paydavosi N., Chauhan Y.S., Gu J.J., Si M., Ye P.D., Hu C., University of California-Berkeley, US

In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIM-CMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen [...]

Modeling of Short-Channel Effect for Ultra-Thin SOI MOSFET on Ultra-Thin BOX

Miyamoto H., Fukunaga Y., Zenitani H., Kikuchihara K., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

The SOTB-MOSFET (ultra-thin film SOI layer on ultra-thin BOX) is a candidate for the next MOSFET generations with advanced technology due to its suppression of the short-channel effect. Besides, the thin box layer can well [...]

Investigation on Impact of Different Defects based on Different Trap Energy Level in the Framework of Two-Stage NBTI model

Hussin H., Soin N., Bukhori M.F., Universiti Teknologi MARA, MY

Charges in gate dielectric significantly degraded the p-MOSFET device performances particularly due to NBTI phenomenon. The validation of NBTI effects on device and circuit performance require accurate model to ensure reliable prediction during design phase. [...]

Effects of sub-threshold operation on 32 nm technology node PMOSFETs evaluated from the perspective of two-stage NBTI model

Hussin H., Soin N., Bukhori M.F., Universiti Teknologi MARA, MY

We investigate the subthreshold operation effects on NBTI reliability issues in the framework of two-stage NBTI model. This is to include the effect of oxide trap since most previous simulation-based study only focuses on interface [...]

Drain Current Model for Thin Body Undoped and Lightly Doped Double-Gate MOSFETs

Abd Elhamid H., Ineguez B., Ismail Y., Deen MJ., Zewail City of Science and Technology, EG

We developed new compact models that include the QM effects on electrical properties such as the surface potential, and drain current. The models were used to study the impact of subband engineering and holes/electrons IMREF [...]

WCM – Compact Modeling

Fishbone Pattern Phenomena on a Non-Conductive Substrate in Electrohydrodynamic Discharging

Son S., Lee S., Choi J., Haque S., Sungkyunkwan University, KR

The intense electric field concentrated on the meniscus at a nozzle orifice is able to trigger the electro-hydrodynamic (EHD) discharging of tiny droplets or jets [1-2]. The electric field distribution along the pathway from the [...]

Fabrication of Active Digital Microfluidic Paper Chips with Inkjet-printed Patterned Electrodes and their Point-of Care Biomedical Application

Ko H., Lee J., Kim K., Kim Y., Kee Y., Kim K., Kim Y., Jung C-H, Choi J-H, Kwon O-S, Shin K., Sogang University, KR

Active, paper-based, microfluidic chips driven by electrowetting are fabricated by using inkjet printing and demonstrated for reagent transport and mixing. Instead of using the passive capillary force on the pulp to actuate a flow of [...]