Kim K. – TechConnect Briefs

Fabrication of Active Digital Microfluidic Paper Chips with Inkjet-printed Patterned Electrodes and their Point-of Care Biomedical Application

Choi J-H, Jung C-H, Kee Y., Kim K., Kim Y., Ko H., Kwon O-S, Lee J., Shin K., Sogang University, KR

Active, paper-based, microfluidic chips driven by electrowetting are fabricated by using inkjet printing and demonstrated for reagent transport and mixing. Instead of using the passive capillary force on the pulp to actuate a flow of [...]

Capacitance-based real time monitoring of endocytosis

Kim D., Kim K-M, Kim K., Kim P., Lee R.M., Shin J.-S., Yoo K.H., Yun C.O., Yonsei University, KR

There exist three kinds of endocytosis; receptor mediated endocytosis, pinocytosis and phagocytosis. First, receptor-mediated endocytosis is essential for targeted gene/drug delivery to a specific cell type. Second, pinocytosis is the engulfing and digestion of dissolved [...]

Variability Study for Silicon Nanowire FETs

Chiang M-H, Hsu W.-C., Kim K., Liao Y.-B., National Cheng Kung University, TW

3-D numerical simulation shows that both the conventional and JL nanowire FETs are sensitive to structural variation whereas the former is more tolerable. Due to more increased Ion/Ioff for lower D and WSi in JL, [...]

Rhodamine B Isothiocyanate-Modified Ag Nanoaggregates on Dielectric Beads: A Novel Surface-Enhanced-Raman-Scattering and Fluorescent Imaging Material

Jang H.J., Kim K., Lee H.B., Lee J.W., Seoul National University, KR

Ag-deposited silica and polystyrene beads are efficient surface-enhanced-Raman-scattering (SERS) substrates that can be used as core materials of SERS-based biosensors. In this work, we report that once rhodamine B isothiocyanate (RhBITC) is adsorbed onto them, [...]

A Study on the Electrical Properties of Plasma Nitrided Oxide Gate Dielectric in Flash Memory

Kang H., Kim K., Lee S., Park M., Suh K., Samsung Electronics, KR

In this paper, we address the effect of Plasma Nitridation on the gate dielectric by a combined experimental and simulation study of gate oxidation. Firstly, Boron segregation at the Si/SiO2 interface is experimentally characterized by [...]

Silver Particle and Silver Thiolate-Based Molecular Sensing/Recognition Units Operating via Surface-Enhanced Raman Scattering

Kim K., Kim N.H., Lee H.S., Lee Y.M., Park H.K., Seoul National University, KR

Noble metallic nanostructures exhibit a phenomenon known as surface-enhanced Raman scattering (SERS) in which the scattering cross sections are dramatically enhanced for molecules adsorbed thereon. We demonstrate that commercially available Ag(μAg) powders can be used [...]

2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET

Kim K., Park I-S, Won T., Inha University, KR

We propose a novel device structure (Si1-xGex/Si/Si1-xGex hetero-structure), which is called “center-channel (CC) double-gate (DG) MOSFET, ”. The device performance of the proposed FET structure was investigated with our two-dimensional quantum-mechanical simulator which is based [...]

Kinetic Monte Carlo Modeling of Boron Diffusion in Si Crystalline Materials

Hwang C-O, Kim K., Kwon O., Seo J., Won T., School of Engineering, Inha University, KR

In this paper, we report a lattice-free kinetic Monte Carlo (KMC) result of boron diffusion at low temperatures 450o and 550o with vacancy + interstitialcy mechanism or vacancy + kick-out one with dilute self-interstitials (I) [...]

2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET

Kim K., Kwon O., Seo J., Won T., Inha University, KR

A two-dimensional quantum mechanical modeling has been performed to simulate a nano-scale FinFET by obtaining the self-consistent solution of coupled Poisson and Schrödinger equations. Calculated current-voltage (I-V) curves are carefully compared with experimental data to [...]

Molecular Dynamics (MD) Calculation on Ion Implantation Process with Dynamic Annealing for Ultra-shallow Junction Formation

Kim K., Kwon O., Seo J., Won T., Inha University, KR

In this paper, we report a molecular dynamics (MD) simulation of the ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics [...]