Papers – Page 6 – TechConnect Briefs

BSIM4 and BSIM Multi-Gate Progress

Dunga M.V., Lin C.H., Xi X., Chen S., Lu D.D., Niknejad A.M., Hu C., UC-Berkeley, US

Compact models form an integral part of any circuit design environment, ranging from analog and digital design to mixed-signal design worlds. The models need to be developed and improved in parallel with technology advancements to [...]

Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact Modeling

Zhou X., Chandrasekaran K., Chiah S.B., Shangguan W., Zhu Z., See G.H., Mani Pandey S., Lim G.H., Rustagi S., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG

In this paper, we extend our unified regional approach to bulk-MOS charge modeling with non-pinned surface potential for various device structures such as PD/FD/UTB SOI and s-DG MOSFETs, including strained-Si channel. The regional solutions make [...]

Compact Iterative Field Effect Transistor Model

Shur M.S., Turin V., Veksler D., Ytterdal T., Iñiguez B., Jackson W., Rensselaer Polytechnic Institute, US

Compact models for field effect transistors should satisfy two conflicting requirements. On one hand, they should be simple enough and should contain a small number of physics-based parameters to be suitable for parameter extraction. On [...]

Halo Doping: Physical Effects and Compact Modeling

Mudanai S., Rios R., Shih W-K, Packan P., Lee S-W., Intel Corp., US

As the devices are scaled to ultra short channel lengths, pocket or halo implants have been used widely to reduce DIBL and other short channel effects. Although, the use of halo implants helps with control [...]

Advanced Compact MOSFET Model HiSIM2 Based on Surface Potentials with a Minimum Number of Approximation

Miura-Mattausch M., Navarro D., Sadachika N., Suzuki G., Takeda Y., Miyake M., Warabino T., Machida K., Ezaki T., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Kumashiro S., Inagaki R., Miyamoto S., Hiroshima University, JP

The compact model HiSIM2 supports RF-circuit applications with advanced MOSFETs and is a further development of HiSIM1 which has been released since 2001 for public usage. Important features, required for the real applications, are summarized. [...]

Accuracy of Surface-Potential-Based Long-Wide-Channel MOS Transistor Compact Models

Jie B.B., Sah C-T, University of Florida, US

Frequently asked questions are addressed, “How accurate are the approximate long-and-wide-channel MOS transistors baseline models that have been used to develop the compact models for computer-aided circuit designs?” Three commonly used surface-potential (US=q*PSIS/kT) approximations of [...]

Benchmark Tests on Conventional Surface Potential Based Charge-Sheet Models And the Advanced PUNSIM Development

He J., Song Y., Niu X., Zhang G., Zhang X., Zhang G., Zhang X., Huang R., Chan M., Wang Y., Peking University, CN

This paper reports the benchmark test results of surface potential solution, inversion charge and channel current calculation, and short-channel effect model of various surface based charge-sheet models and our PUNSIM development to breakthrough the drawbacks [...]

An Improved MOS Transistor Model with an Integrated Mobility Model

Hauser J.R., N.C. State University, US

A new and improved MOS I-V model will be presented using a more exact approach to include surface field dependent mobility effects. Mobility degradation effects are included in the basic I-V differential equation as opposed [...]

Theory and Modeling Techniques used in PSP Model

Gildenblat G., Li X., Wang H., Wu W., Jha A., van Langevelde R., Scholten A.J., Smit G.D.J., Klaassen D.B.M., Pennsylvania State University, US

This paper describes theoretical foundation and details of the new compact modeling techniques used in the advanced surface-potential-based compact MOSFET model PSP, jointly developed by the Pennsylvania State University and Philips Research. Specific topics include [...]

Symbolic charge-based MOSFET model

Galup-Montoro C., Schneider M.C., Federal University of Santa Catarina, BR

The new generation of compact MOSFET models provides accurate current, charge, capacitance and noise characteristics as numerical outputs of a rather complicated set of internal equations specific to each model. Clearly, numerical circuit simulation is [...]