A Numerical Study on THZ-Wave Generation and Detection of Metal-Oxide-Semiconductor Field-effect Transistor

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A numerical method is developed in this paper to simulate FET-based THz wave generation and detection. The method is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simulation results are compared with the previous theory, proving the validity of the developed numerical method and providing useful data for MOS field effect transistor THZ generation and detection analysis and optimization.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 629 - 632
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation
ISBN: 978-1-4665-6275-2