CMOS active pixel image sensor with single transistor architecture (1T CMOS APS) is proposed in this paper and verified by experiment data. By switching the photo sensing pinned diode, reset and select can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus, the reset and select transistors can be removed. In addition, the reset and select signal lines can be shared to reduce the metal signal line, leading to a very high fill factor. The pixel design and operation principles are discussed in detail in this work. The functionality of the proposed 1T CMOS APS architecture has been experimentally verified by a fabricated chip in a standard 0.35 µm CMOS AMIS technology.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: May 12, 2013
Pages: 51 - 53
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices