In this paper, a junctionless nanowire MOSFET with the dynamic threshold voltage operation methodology （DT-JNT） is proposed and its characteristics are studied comparing with those of a conventional junctionless nanowire transistor (JNT) and a double-gate junctionless transistor (DG-JT) by TCAD simulations. The numerical results demonstrate that the DT-JNT shows a series of desirable features, e.g., integrating the advantages of the junctionless transistor, such as easy-to-manufacture, cost effective, etc and possessing dynamic threshold voltage, thus it enhances applicability to various circuit applications. In addition, when it is used by connect the control gate and the adjust gate together, its ON/OFF current ratio is enhanced. Overall, it holds the potential to be further used in the next generation nanoscale circuit design.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: May 12, 2013
Pages: 516 - 519
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation