Junctionless Nanowire MOSFET with Dynamic Threshold Voltage Operation Methodology
Deng W., He J., Mei J., Wang H., Ye Y., Yu C., Zhang A., PKU-HKUST Shenzhen-Hongkong Institution, CN
In this paper, a junctionless nanowire MOSFET with the dynamic threshold voltage operation methodology (DT-JNT) is proposed and its characteristics are studied comparing with those of a conventional junctionless nanowire transistor (JNT) and a double-gate [...]