Analytic Model forAmorphous GST OTS in Phase Change Memory Cell with Hopping Transport

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This paper presents an analytic model for amorphous GST OTS in phase-change-memory cell with the hopping transport mechanism, which is widely used in the organic semiconductor device simulation. In this work an equivalent hopping probability model is presented according to the Abrahams-Miller formula, and then an equivalent capacitor model is develped to depict the charge distribution in the amorphous GST. By coupling the hopping probability model and the capacitor model, the OTS I-V characteristic for OTS effect with different geometry and trap density are achieved, and the results agree with those from the reported measurements data.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: May 12, 2013
Pages: 508 - 511
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation
ISBN: 978-1-4822-0584-8