Semiconductor Device Modeling and Novel Structures Simulation

Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs

Sudhama C., Spulber O., McAndrew C., Thoma R., Motorola SPS, US

Bulk and novel MOSFET structures with gate-lengths in the 30nm regime are to become industry standards in ~2007. As devices are scaled down to these lengths, overlap- and fringe-capacitance between the gate and source/drain regions [...]

Spatial Modulation of the Dielectric Permittivity and its Effect on the Spectral Responsivity of Heterodimensional Photodetectors

Castro F., Nabet B., Motorola Laboratories, US

Spectral photocurrent measurements on AlGaAs/GaAs heterodimensional detectors show a peak near the absorption edge of GaAs under low incident power and at high biasing levels. Previous work has attributed similar results to the Franz-Keldysh spectral [...]

Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs

Jungemann C., Nguyen C.D., Decker S., Meinerzhagen B., Universitat Bremen, DE

An improved version of the modified local density approximation is presented which correctly describes the impact of size quantization on the threshold voltage and capacitance of state-of-the-art NMOSFETs with very thin oxides for temperatures from [...]

Impact of Non-Stationary Transport Effects on Realistic 50nm MOS Technology

Munteanu D., Le Carval G., Guegan G., LETI, CEA/Grenoble, DMEL, FR

This paper highlights the impact of non-stationary transport on performances of deep submicron CMOS bulk technology. We present a quantitative analysis of technology influence on the needed level for carrier transport modeling (Drift-Diffusion versus Energy [...]

A Qualitative Study on Global and Local Optimization Techniques for TCAD Analysis Tasks

Binder T., Heitzinger C., Selberherr S., Technical University Wien, AT

We compare the two well-known global optimization methods, simulate annealing and genetic optimization, to a local gradient-based optimization techniques. We rate the applicability of each method in terms of the minimal achievable target value for [...]

3-D Simulation and Modeling of Signal Isolation in RF/IF Circuits

Bharatan S., Welch P., To K.H., Thoma R., Huang M., Motorola, Digital DNA Laboratories, US

In this paper, we present a practical methodolgy for the 3-dimensional simulation of signal isolation structures along with comparison to measurements made on test structures. We also describe the extraction of a scalable compact model [...]

A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation

Grasser T., Kosina H., Gritsch M., Selberherr S., TU Wien, AT

Due to the ever decreasing device geometries non-local effects gain more and more importance. It is particularly well known that impact ionization is not properly described by neither a local field nor a local energy [...]

Substrate Current Simulations at Elevated Temperatures

Lyumkis E., Mickevicius R., Polsky B., Loechelt G., Zlotnicka A., Thoma R., Integrated Systems Engineering, Inc., US

We report results of hydrodynamic simulations and measurements of substrate currents in submicron MOSFET. Both simulations and measurements show anomalous dependence of the substrate current on lattice temperature, which is consistent with previously published experimental [...]

A Scalable RF Model of the Metal-Oxide-Metal (MOM) Capacitor

Chunqi G., Manh Anh D., Zheng Z., Boyland F., Chartered Semiconductor Manufacturing Ltd., SG

An accurate, scalable RF subcircuit model is presented for Metal-Oxide-Metal (MOM) capacitor. Polynomial equations are used to describe the relation between the value of each subcircuit component and the area of MOM capacitor. The model [...]

Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s

Chiah S.B., Zhou X., Lim K.Y., Wang Y., See A., Chan L., Nanyang Technological University, SG

A model for effective channel doping in submicron LDD nMOSFET's is presented by adding the effect of the lateral nonuniform pile-up charge centroid to the Gaussian profile with peak doping near the edge of the [...]

A Model for Fully Depleted Double Gate SOI MOS Transistors Including Temperature Effects

Gharabagi R., St. Louis University, US

A model for a fully depleted double gate Silicon on Insulator (SOI) Metal Oxide Semiconductor (MOS) Transistors is presented. Small geometry effects such carrier velocity saturation, mobility degradation, and channel length modulation are included. Both [...]

A Simplified Approach for Noise Parameter Transformation Between Common Emitter and Common Base InP DHBT

Xiong Y.Z., Ng G.I., Wang H., Tan C.L., Yang H., Nanyang Technological University, SG

A new approach, based on the typical T-model of InP DHBT, has been developed which uses only a simple set of formulas to transform noise parameters between common emitter and common base configurations. The calculated [...]

Using ‘Adaptive Resurf’ Technique and Field Plate Working to Improve the Safe Operating Area of n-type Drain Extended MOS Transistors

Bakeroot B., Moens P., Vermandel M., Doutreloigne J., University of Gent, BE

Using TCAD, an n-type DEMOS (Drain Extended MOS) has been developed in a standard 0:35 mCMOS technology. The devices are optimised towards a Safe Operating Area (SOA) of 60 - 65 V using an n-type [...]

Broadband Millimeter Wave Finline Antenna Simulation and Performance

Fu J.S., Ng C.L., Kwang Y., Sia E.K., Lu C., Nanyang Technological University, SG

Analysis on fin line antenna with broadband and tolerable VSWR characteristic was done. Emphasis were placed in the formulation of the taper equations for the transmission fin line and radiation section and verification of good [...]

Three-Dimensional Simulation of AlxGa1-xAs/GaAs Gradual Heterojunction Bipolar Transistor

García-Loureiro A.J., Pena T.F., Prat Viñas Ll., Univ. Santiago de Compostela, ES

In this work we present the results of the simulation of AlxGa1-xAs/GaAs gradual heterojunction bipolar transistor using a parallel three-dimensional semiconductor device simulator. This simulator is based on drift-diffusion transport model. In order to solve [...]

Simulation of Recess-Structure Dependence of Gate-Lag Phenomena in GaAs MESFETs

Horio K., Mitani Y., Wakabayashi A., Shibaura Institute of Technology, JP

We have made two-dimensional simulation of turn-on characteristics of recessed-gate and buried-gate GaAs MESFETs, and studied how the gate-lag or the slow current transient (which may occur due to surface states) is affected by the [...]

Determination of Low-Frequency Noise Spectrum in Ion-sensitive Field Effect Transistors (ISFET’s) Based on a Physical Model for Drift

Jamasb S., Collins S.D., Smith R.L., Conexant Systems, US

A physical model for drift in pH-sensitive ISFET's is employed to extract the inherent low-frequency noise power spectral density associated with these devices. The noise spectrum extracted from measured drift data demonstrates ideal 1/f noise [...]

TCAD Modeling using a Neural Network Based Approach

Matei R., Dima G., Profirescu M.D., University Politehnica of Bucharest, RO

This paper presents system level modelling and simulations results of two closed loop, force-feedback control strategies for micromachined tunnelling accelerometers. The first approach is based on the incorporation of the sensing element in a sigma-delta [...]

Modeling of Antipodal/BCSSS Transition for Millimeter Wave Finline High Q Local Injected Mixer

Sia E.K., Fu J.S., Lu C., Tan S.H., Nanyang Technological University, SG

Millimeter-wave application in intelligent vehicle sensor and others has been in great demand recently for it's small size, high data rate and high resolution property. In this paper, we report our design and simulation of [...]

Investigation of the Mechanism of Floating Node Assisted CMOS Latch-Up

Sim S-P., Guo P., Kordesch A., Chen W.F., Liu C-M., Yang C.Y., Lee K., Santa Clara University, US

A new phenomenon of floating node assisted CMOS latch-up is experimentally observed and investigated using TCAD simulation. Using test structures having parasitic bipolar transistors and an electrically floating N+ diffusion node located at various distances [...]

Noise Modelling of Microwave Bipolar Transistors

Patti F., Miceli V., Spagnolo B., Università di Palermo, IT

In this paper we present a stochastic approach to study the noise modelling of bipolar microwave transistors. Starting from experimental on-wafer measurements of the scattering and noise parameters of these bipolar devices we obtain the [...]

A New Approach for the Extraction of Threshold Voltage for MOSFET’s

Wong J.S., Ma J.G., Yeo K.S., Do M.A., Nanyang Technological University, SG

A new approach for the extraction of threshold voltage (Vth) is proposed, namely, the "Third Derivative of Drain-Source Current" method or simply "TD" method. This method extracts the Vth by finding the Vgs where the [...]

Parallel Dynamic Load Balancing for Semiconductor Device Simulations on a Linux Cluster

Li Y., Lin S-S., Liu J-L., Lin S-S., Yu S-M., Liu J-L., Chao T-S., Sze S.M., National Chiao Tung University, TW

A parallel dynamic load balancing for 2-D and 3-D semiconductor device simulations is proposed. The hydrodynamic and drift diffusion models are discretized and solved with finite volume (box) and monotone iterative methods. Dynamic load balancing [...]

Simulation of HgCdTe Double Layer Heterojunction Detector Devices

Hess G.T., Sanders T.J., Newsome G., Fischer T., Florida Institute of Technology, US

Mercury-Cadmium-Telluride (HgCdTe) diodes are used as detectors of long wavelength photons by interaction of the infrared radiation with the atomic lattice of the material, creating hole-electron pairs and subsequent photocurrents. Models for these physical phenomena [...]

A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using an Analytical Model

Chen Y., Luo J., University of California-Berkeley, US

An analytical model for the electric characteristics of ultrathin double-gate and surrounding-gate MOSFETs in strong inversion and accumulation is presented. The analytical solutions to the 1-D simplified Poisson's equation in both Cartesian and cylindrical coordinates [...]

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