Substrate Current Simulations at Elevated Temperatures

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We report results of hydrodynamic simulations and measurements of substrate currents in submicron MOSFET. Both simulations and measurements show anomalous dependence of the substrate current on lattice temperature, which is consistent with previously published experimental results [1]. This unusual behavior of substrate current is due to the dependence of the electron energy relaxation length on lattice temperature, and cannot be explained within the commonly used drift-diffusion transport model.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 478 - 481
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4