Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs

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Bulk and novel MOSFET structures with gate-lengths in the 30nm regime are to become industry standards in ~2007. As devices are scaled down to these lengths, overlap- and fringe-capacitance between the gate and source/drain regions gain more importance a

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 450 - 453
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4