Simulation of HgCdTe Double Layer Heterojunction Detector Devices

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Mercury-Cadmium-Telluride (HgCdTe) diodes are used as detectors of long wavelength photons by interaction of the infrared radiation with the atomic lattice of the material, creating hole-electron pairs and subsequent photocurrents. Models for these physical phenomena have been created and used to structure a new simulator for the HgCdTe device. Statistical simulation methods are being employed to implement optimization of the detector. Finally, data on specially built HgCdTe diodes has been compared with theoretical expectations derived from the HgCdTe detector simulator.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 542 - 545
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4