Noise Modelling of Microwave Bipolar Transistors

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In this paper we present a stochastic approach to study the noise modelling of bipolar microwave transistors. Starting from experimental on-wafer measurements of the scattering and noise parameters of these bipolar devices we obtain the corresponding Giacoletto model with the noise internal sources. We write down then the stochastic differential equations of the Giacoletto model for a short-circuited output in order to study the noise properties of these devices. From the power spectrum of the output current we obtain the behaviour of the noise figure as a function of the operating frequency. Our theoretical results are in good agreement with experimental ones. The present approach allows to study the statistical properties of the output current for different statistics of the internal noise sources of the bipolar transistors (BJT and HBT).

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 530 - 533
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4