Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s

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A model for effective channel doping in submicron LDD nMOSFET’s is presented by adding the effect of the lateral nonuniform pile-up charge centroid to the Gaussian profile with peak doping near the edge of the metallurgical channel. The effect of the pile-up centroid on the threshold voltage parameter extraction is elaborated, from which semi-empirical relationships on all fitting parameters are formulated. Threshold voltage versus gate length data from MEDICI-simulated devices with lateral Gaussian pile-up doping profiles are used for the verification of this model.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 486 - 489
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4