A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using an Analytical Model


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An analytical model for the electric characteristics of ultrathin double-gate and surrounding-gate MOSFETs in strong inversion and accumulation is presented. The analytical solutions to the 1-D simplified Poisson’s equation in both Cartesian and cylindrical coordinates with symmetric boundary conditions are examined. The concentration of the induced inversion charge by the same surface potential is found significantly higher in the surrounding-gate MOSFET, which indicates its better gate control and achievable higher current. Finally, the full 1-D Poisson’s equation is numerically solved and compared with the analytical solution of the simplified equation, and an excellent agreement between them is found.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 546 - 549
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4