Compact Modeling – Page 2 – TechConnect Briefs

HiSIM-SOTB: A Compact Model for SOI-MOSFET with Ultra-Thin Si-Layer and BOX

Miura-Mattausch M., Kikuchihara H., Feldmann U., Nakagawa T., Miyake M., Iizuka T., Mattausch H.J., Miura-Mattausch M., Hiroshima University, JP

The Silicon-On-Thin-Buried-Oxide (SOTB) transistor is a descendant of the conventional SOI MOSFET with thin Silicon and BOX layers. Many different structure and material variations are possible, where the choice of a thicker BOX may be [...]

Modeling of Chain History Effect based on HiSIM-SOI

Fukunaga Y., Miyake M., Toda A., Kikuchihara K., Baba S., Feldmann U., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

SOI-MOSFET is considered as a candidate for the next MOSFET generations with advanced technology due to its suppression of the short-channel effect and its high driving capability. However, it is known that the history effect [...]

A Simplified Model for Dynamic Depletion in Doped UTB-SOI/DG-FinFETs

Zhou X., Chiah S.B., Nanyang Technological University, SG

Compact modeling for doped-body MOSFETs, such as ultra-thin body (UTB) SOI and double-gate (DG) FinFETs, represents the most challenging task since it involves the Poisson’s solution with two boundary conditions, which is not available when [...]

Analytical Surface Potential Calculation in UTBSOI MOSFET with Independent Back-Gate Control

Khandelwal S., Chauhan Y.S., Karim M.A., Venugopalan S., Sachid A., Niknejad A., Hu C., Norwegian University of Science & Technlogy, NO

An analytical method for calculation of front- and back-gate surface-potential in ultra-thin body SOI MOSFETs is presented. The method allows surface-potential calculation with independent back-gate control which is very important in these devices. The calculated [...]

Physics based Analytical Model for a Pocket Doped p-n-p-n Tunnel Field Effect Transistor

Narang R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., University of Delhi, South Campus, IN

Tunnel FET working on the principle of band-to-band tunneling mechanism has come up as a promising candidate with advantages of going below the limitation of 60mV/decade sub-threshold slope, and lower leakage current and thus capable [...]

Critical review of CNTFET compact models

Claus M., Haferlach M., Gross D., Technische Universität Dresden, DE

The very recent progress in manufacturing carbon nanotube transistors (CNTFETs) makes these transistors attractive for analog HF circuit applications for which adequate compact models accurately describing the transistor behavior are needed. So far, most models [...]

Topic: Compact Modeling

HiSIM-SOTB: A Compact Model for SOI-MOSFET with Ultra-Thin Si-Layer and BOX

Modeling of Chain History Effect based on HiSIM-SOI

A Simplified Model for Dynamic Depletion in Doped UTB-SOI/DG-FinFETs

Analytical Surface Potential Calculation in UTBSOI MOSFET with Independent Back-Gate Control

Physics based Analytical Model for a Pocket Doped p-n-p-n Tunnel Field Effect Transistor

Critical review of CNTFET compact models

Modeling and Analysis of MOS Capacitor Controlled by Independent Double Gates

Discreteness and Distribution of Drain Currents in FinFETs

Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles

Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow