The very recent progress in manufacturing carbon nanotube transistors (CNTFETs) makes these transistors attractive for analog HF circuit applications for which adequate compact models accurately describing the transistor behavior are needed. So far, most models are developed for digital circuit design. However, there exists a number of additional requirements such as model reliability (overall convergence), well defined parameter extraction and a smooth geometry scaling to allow circuit optimization. Therefore, a critical review of current CNTFET compact models is needed to check their suitability for analog HF circuit design. Special focus is put on the mismatch between state-of-the-art CNTFET technologies and the assumptions underlying the models. To support the discussion, compact model results are compared with experimental data of high-performance CNTFETs.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 770 - 775
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling