Modeling of Chain History Effect based on HiSIM-SOI
Baba S., Feldmann U., Fukunaga Y., Kikuchihara K., Mattausch H.J., Miura-Mattausch M., Miyake M., Toda A., Hiroshima University, JP
SOI-MOSFET is considered as a candidate for the next MOSFET generations with advanced technology due to its suppression of the short-channel effect and its high driving capability. However, it is known that the history effect [...]