Ueno F., Tanaka A., Miyake M., Iizuka T., Yamamoto T., Kikuchihara H., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M.
Hiroshima University, JP
Keywords: 2D-effect, current flow, DMOS, HV-MOSFET
High-voltage devices are utilized for a variety of applications, with application voltages ranging from a few volts to a few hundred volts. To develop efficient circuits for the variety of applications, accurate modeling of the basic device is the key. Here our purpose is to develop a compact model for the DMOS structure which considers the vertical 2D current flow and to implement it into HiSIM_HV. The accuracy of the developed model is verified.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 752 - 755
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4665-6275-2