An analytical method for calculation of front- and back-gate surface-potential in ultra-thin body SOI MOSFETs is presented. The method allows surface-potential calculation with independent back-gate control which is very important in these devices. The calculated surface-potential is in excellent agreement with the numerical solution with an accuracy of the order of nano-volts.The method can be used to develop complete surface-potential based compact model for these devices.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 780 - 783
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling