It is likely that the characterization and modeling of a finFET will be carried out on a multi-fin structure, since it is a single electrical device functionally. Discreteness of multiple fins in a multi-fin FET brings interesting new phenomena to this new type of MOSFET. In this paper, we present the discreteness of source and drain voltages of individual fins in a multi-fin FET and show their distributions. We also present the discreteness and distribution of single fin drain current. There also exist discreteness and distributions of source, drain, and gate capacitance, gate leakage current, etc. of individual fins.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 762 - 765
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling