TechConnect Proceedings Papers
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The Effects of Dwell_time of Monopolar Waveform on Droplet Formation through the Analysis of Fluid Propagation Direction
For inkjet printing, the fluid dynamics in a capillary tube caused by the movement of the piezoelectric material is essential due to the need to adjust the voltage pulse waveform, but it has seldom been [...]
A simulation study on the property of micro-arrayed negative refractive index material for the energy transfer
In this paper we discuss in building a micro-arrayed negative refractive index material which enhances the energy transfer between a wireless transmitter and a receiver. We simulate and study the effects of introduction of negative [...]
Integration of memristors with MEMS in different circuit configurations
The detailed simulation of the recently proposed MEMS-memristor integration is presented. Interestingly, charge transfer is an operating principle that is common to both memristors and certain kinds of MEMS devices such as parallel plate capacitors. [...]
Current-mode Processing Possibilities in HV SoI Integrated Systems
The paper discusses possibilities of current-mode based functional block implementation into signal path of HV SoI voltage-mode circuits. The topic arose as an effect of research on HV SoI ASICs for automotive applications. It turned [...]
Optimized Topology of an ASIC for Thermal Analysis of Multi-Core Processors
The main goal of the paper is to present the optimized ASIC design for the investigation of thermal-coupling among cores in multi-core processors. In short, we designed a dedicated ASIC composed of regular 16x24 heat [...]
Thermal Coupling in Technologies Based on Tri-gate Transistors
This paper presents the analyses of static and dynamic thermal coupling among microsystem components for technologies based on tri-gate transistors. Simulations were carried out using Green’s function thermal solver based on power trace data computed [...]
Junctionless Nanowire MOSFET with Dynamic Threshold Voltage Operation Methodology
Mei J., Zhang A., Yu C., Ye Y., Wang H., Deng W., He J., PKU-HKUST Shenzhen-Hongkong Institution, CN
In this paper, a junctionless nanowire MOSFET with the dynamic threshold voltage operation methodology (DT-JNT) is proposed and its characteristics are studied comparing with those of a conventional junctionless nanowire transistor (JNT) and a double-gate [...]
Numerical Study on Gate-All-Around Tunneling FET with SiO2 Core and Si Shell Structure
Zhang A., Zhang L., Zhang X., Zhang A., Zhang L., Zhang X., Mei J., Zhang A., Zhang L., Zhang X., He H., He J., He H., He J., Chan M., PKU-HKUST Shenzhen-Hongkong Institution, CN
This work presents a gate-all-around tunneling FET based on SiO2 core and Si shell structure (GAA-SOI-TFET) and demonstrates its performance characteristics via the numerical simulation method. The 3-D T-CAD numerical simulations demonstrate that this new [...]
Analytic Model forAmorphous GST OTS in Phase Change Memory Cell with Hopping Transport
Wang C., Wang H., Wang W., Wang C., Wang H., Wang W., Cao Y., Wang C., Wang H., Wang W., Ye Y., He J., PKU-HKUST Shenzhen-Hongkong Institution, CN
This paper presents an analytic model for amorphous GST OTS in phase-change-memory cell with the hopping transport mechanism, which is widely used in the organic semiconductor device simulation. In this work an equivalent hopping probability [...]