The detailed simulation of the recently proposed MEMS-memristor integration is presented. Interestingly, charge transfer is an operating principle that is common to both memristors and certain kinds of MEMS devices such as parallel plate capacitors. Due to this common operating principle, the circuit integration of these two devices was proposed in Ref. (5) with novel applications for RF MEMS tuning, RF switching interconnections, neuromorphic computers, and essentially adding local memory to MEMS. However, details of the integration were lacking. This work simulates and analyzes the charge transfer interaction of basic circuits combining these two devices. The Hewlett Packard model (2) where the memresistance depends on the doping width across the oxide film is used for the memristor element. For the MEMS element, the parallel plate capacitor is selected due to the role that electronic charge transfer plays in its operating principle. These two devices were combined in different circuit configurations in order to analyze the relationship between their main parameters; the memresistance (resistance value of the memristor) and the motion of the plate in the MEMS capacitor. The results show that the MEMS capacitor displacement couples to memresistance creating a link between the mechanical aspect and resistive memory.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: May 12, 2013
Pages: 532 - 535
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation