MOSFET – Page 5 – TechConnect Briefs

HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond

Miura-Mattausch M., Sadachika N., Miyake M., Navarro D., Ezaki T., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Miyamoto S., Inagaki R., Furui Y., Hiroshima University, JP

HiSIM realizes both accurate and fast circuit simulation. The newly developed HiSIM2.4.0 includes required features in modeling for the 45nm technology node and beyond such as the STI stress effect. A major development is an [...]

Theoretical study of Graphene Nanoribbon Field-Effect Transistors

Liang G., Neophytou N., Nikonov D., Lundstrom M., Purdue Unioversity, US

In this work, we theoretically studied the electronic structure of CNRs using pz-orbital tight-binding model as well as a simple analytical formula. Moreover, the ballistic performance of CNR MOSFETs using a semi-classical “top-of-the-barrier” MOSFET model [...]

On the Compact Modelling of Induced Gate Noise in the MOS Transistor

Roy A.S., Enz C.C., Swiss Federal Institute of Technology, Lausanne (EPFL), CH

This work presents a analytical model to calculate gate related noise parameters for any arbitrary velocity field relationship and discusses some finer point of diffusivity modeling and impact of those effect on gate related noise [...]

Compact Modeling of Nonlinearities in Submicron MOSFETs

da Silva P.D., de Sousa F.R., Schneider M.C., Montoro C.G., Schneider M.C., Federal University of Santa Catarina, BR

Low power operation in RF CMOS circuits requiring low-distortion levels is often difficult to achieve due to the exponential relationship between drain current (IDS) and gate-to-source voltage (VGS) in subthreshold region. Our contribution in this work [...]

Modeling Small MOSFETs using Ensemble Devices

Watts J.S., Pino R., Trombley H., IBM, US

This paper discribes methodogy to correctly model small area MOSFETs including paremeter extraction and centering using multiple parallel devices for accurate measurments. The method includes adjusting the measured data to recover true single finger behavior, [...]

On the Modeling of the Current-Voltage Characteristics of a Symmetrical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with an Undoped Body

Wong M., Shi X., Hong Kong University of Science and Technology, HK

Three general classes of solutions are needed to model an arbitrary double-gate (DG) metal-oxide-semiconductor (MOS) capacitor with arbitrary bias conditions. The “zero-field” (F0) and the “zero-potential” (P0) solution regimes are separated by the “zero-field and [...]

Precise 2D Compact Modeling of Nanoscale DG MOSFETs Based on Conformal Mapping Techniques

Fjeldly T.A., Kolberg S., Norwegian University of Science and Technology, NO

In nanoscale double gate MOSFETs, the dependence on the bias voltages of the 2D electron barrier topology in the conducting channel is all-important for the operation of the device. We consider a DG MOSFET with [...]

Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact Modeling

Zhou X., Chandrasekaran K., Chiah S.B., Shangguan W., Zhu Z., See G.H., Mani Pandey S., Lim G.H., Rustagi S., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG

In this paper, we extend our unified regional approach to bulk-MOS charge modeling with non-pinned surface potential for various device structures such as PD/FD/UTB SOI and s-DG MOSFETs, including strained-Si channel. The regional solutions make [...]

Advanced Compact MOSFET Model HiSIM2 Based on Surface Potentials with a Minimum Number of Approximation

Miura-Mattausch M., Navarro D., Sadachika N., Suzuki G., Takeda Y., Miyake M., Warabino T., Machida K., Ezaki T., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Kumashiro S., Inagaki R., Miyamoto S., Hiroshima University, JP

The compact model HiSIM2 supports RF-circuit applications with advanced MOSFETs and is a further development of HiSIM1 which has been released since 2001 for public usage. Important features, required for the real applications, are summarized. [...]

Benchmark Tests on Conventional Surface Potential Based Charge-Sheet Models And the Advanced PUNSIM Development

He J., Song Y., Niu X., Zhang G., Zhang X., Zhang G., Zhang X., Huang R., Chan M., Wang Y., Peking University, CN

This paper reports the benchmark test results of surface potential solution, inversion charge and channel current calculation, and short-channel effect model of various surface based charge-sheet models and our PUNSIM development to breakthrough the drawbacks [...]