Computational Methods, Simulation & Software Tools


Electron transition energies of single-walled carbon nanotubes: Hartree – Fock’s CNDOL approaches for describing excitations and related properties

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Electronic properties of two kinds of zig-zag (13,0) and (9,0) single walled carbon nanotubes (SWCNT) are studied using both Density Functional Theory (DFT) and an approximate Hartree-Fock (HF) named as Complete Neglect of Differential Overlap [...]

Modeling study of capacitance and gate current in strained High–K Metal gate technology: impact of Si/SiO2/HK interfacial layer and band structure model

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The importance of developing predictive modeling tools has considerably increased with the diffusion of nanoscale technologies, in which strained layers and heterojunctions determine the materials modeling complexity. A self--consistent Poisson--Schroedinger solver based on a full-band [...]

Linearity Performance Assessment of Nanoscale Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET for RFIC design and Wireless application

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In this work, an extended study of linearity behaviour of proposed Gate Material Engineered-Trapezoidal Recessed Channel(GME-TRC) MOSFET(Fig.1.) has been performed using ATLAS and DEVEDIT device simulators and the results so obtained are compared with Trapezoidal [...]

Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation
ISBN: 978-1-4398-3402-2