Horio K., Nakajima A., Fujii K.
Shibaura Institute of Technology, JP
Keywords: GaN, gate lag, HEMT, surface state, trap
Two-dimensional simulation of turn-on characteristics of AlGaN/GaN HEMTs is performed in which both buffer traps and sur-face states are considered. It is studied how the so-called gate lag is affected by these factors. It is shown that gate lag due to buffer traps can occur because in the off state where the gate voltage is negative, electrons are injected into the buffer layer and captured by the traps, leading to more negatively charged buffer layer. It is also shown that gate lag due to an electron-trap-type surface state can occur only when electron’s gate tunneling is considered.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 693 - 696
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4398-3402-2