Modeling study of capacitance and gate current in strained High–K Metal gate technology: impact of Si/SiO2/HK interfacial layer and band structure model

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The importance of developing predictive modeling tools has considerably increased with the diffusion of nanoscale technologies, in which strained layers and heterojunctions determine the materials modeling complexity. A self--consistent Poisson--Schroedinger solver based on a full-band [...]