Yeh H.-M., Chen K.-S.
National Cheng Kung University, TW
Keywords: CA, CAD, cellular automata, CMP, contact stress
This work briefly presents the basic theory, the development, and a primary demonstration of a device-level chemical-Mechanical Polishing (CMP) CAD module. By integrating the phenomenological material removing relation such as Preston’s equation, contact mechanics, finite element analysis, with a cellular automata environment, this CMP CAD is aimed to predict the rounding, dishing, and erosion effects commonly observed in modern copper CMP processes. Primary results indicate that this CAD can essentially catch the characteristics of polishing processes. Further modification of this CAD would enhance its accuracy for industrial applications.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 669 - 672
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4398-3402-2