Nonresonant Response Characteristics to Terahertz Radiation of FETs: Influence of Magnetic Field

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Nonresonant detection on terahertz radiation of field effect transistors by the influence of magnetic field is studied in this paper. The influence of the magnetic field upon the electron mobility in the transistor channel is discussed and the corresponding influence on the nonresonant detection photoresponse is analyzed in detail. Based on the work before, the numerical tool has been modified by adding the influence of magnetic field, and the nonresonant photoresponse characteristics are investigated. The result of simulation has verified the theory, and the work mechanism of this influence has been revealed in this paper.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 713 - 716
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4398-3402-2