CNT, Nano and Molecular Electronics

Using Ultra-long Nanotubes to Make Identical CNT FETs

Yu Z., Rutherglen C., Li S., Burke P.J., University of California Irvine, US

Centimeter scale aligned carbon nanotube arrays are grown from nanoparticle/metal catalyst pads. We find the nanotubes grow both with and “against the wind”. A metal underlayer provides in-situ electrical contact to these long nanotubes with [...]

Centimetre-Long Carbon Nanotubes from Ethanol Decomposition

Zheng L.X., O'Connell M.J., Doorn S.K., Liao X.Z., Zhao Y.H., Hoffbauer M.A., Jia Q.X., Peterson D.E., Liu J., Zhu Y.T., Los Alamos National Lab, US

A simple method was found to grow 4 cm long CNTs, which will enable heigh-strength and light-weight materials in prictical applications. These long CNTs are almost defect-free along the entire length. giving a bright future [...]

Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration

Pourfath M., Gehring A., Cheong B.H., Park W.J., Kosina H., Selberherr S., Vienna University of Technology, AT

Vertically grown carbon nanotubes have the potential for tera-level Integration. However, the well-known ambipolar behavior limits the performance of carbon nanotube field effect transistors. In this work we demonstrate that a double gate structure effectively [...]

Single-Walled Carbon Nanotubes with Small Diameter, Controlled Density and Defined Locations Produced from Catalyst-Containing Polymer Films

Lu J., Kopley T.E., Hueschen M., Moll N., Bai J., Fu D.Y.Q., Liu J., Rider D., Manners I., Winnik M.A., Agilent Technologies, US

We report using catalyst-containing block copolymers as nanotemplates to produce various catalyst nanoclusters or catalyst-containing inorganic nanostructures with controlled size and spacing for carbon nanotube growth. Carbon nanotubes (CNTs) produced from these types of polymer-based [...]

The Effect of Source/Drain Extension Asymmetry on the Leakage Current of Ohmicly-contacted Carbon Nanotube FETs

Alam K., Lake R., University of California Riverside, US

The geometry dependence of the leakage current by modeling the effect of source/drain extension asymmetry on the leakage current of CNTFETs with 20 nm wrap-around gates is investigated. The symmetric geometry has the highest leakage [...]

DNA-Based Nanotechnology: Highly Luminescent CdSe – DNA Nanoscale – Engineered Complexes

Kislov V., Artemyev M., Khomutov G., Russian Academy of Sciences, RU

We present some new results within the concept of using DNA molecules as building blocks and nanotemplates for controllable fabrication of various bioinorganic nanostructures due to their unique physical-chemical properties and recognition capabilities and the [...]

XPS Studies of Silicon Nanoclusters/Nanocrystals Embedded in SiO2 Matrix

Chen T.P., Liu Y., Nanyang Technological University, SG

In this work, X-ray photoelectron spectroscopy (XPS) is used to study the annealing effects on the chemical structures, depth profiling of the chemical states and core-level shifts of the Si nanocrystals in the Si-implanted SiO2 [...]

Influence of Si Nanocrystal Distribution on Electrical Characteristics of MOS Structures

Liu Y., Chen T.P., Ng C.Y., Ding L., Nanyang Technological University, SG

In this work, Si nanocrystals with different distributions were embedded in the gate oxide with ion implantation technique. C-V and time-domain capacitance measurements were conducted to study the electrical characteristics of MOS structures. It is [...]

Study of Cutoff Frequency Calculation in the Subthreshold Regime of Operation of the SOI – MESFETs

Tarik K., Vasileska D., Thornton T.J., Arizona State University, US

Micropower circuits based on sub-threshold MOSFETs are used in a variety of applications ranging from digital watches to medical implants. The principal advantage of a transistor operating in the sub-threshold regime is the minimum power [...]

Observation of Soft-Breakdown in Ultra-Thin SiO2 Films under Repetitive Ramped Voltage Stress by Using Conductive Atomic Force Microscopy

Wu Y-L, Lin S-T, Liao J-C, National Chi-Nan University, TW

The degradation and breakdown characteristics of ultra-thin SiO2 (Tox = 5 nm) were investigated by using conductive AFM (C-AFM). Repetitive ramped voltage stress (RVS) was applied through the C-AFM tip to the oxide with polarity [...]

A Nanocore/CMOS Hybrid System-on-Package (SoP) Architecture for Future Nanoelectronic Systems

Weerasekera R., Liu J., Zheng L-R, Tenhunen H., LECS/IMIT/KTH, SE

We propose Autonomous Error-Tolerant (AET) cellular network based architecture for future nano-electronic systems. Each AET cell consists of a nano-core, dedicated for local computing, CMOS cell-peripherals, responsible for cell I/O and System-level tasks, and their [...]

Quantum Information Processing with Nuclear Spin-Based Devices

Havel T.F., Cappellaro P., Ramanathan C., Cory D.G., Massachusetts Institute of Technology, US

This talk will illustrate the benefits offered by QIP with two devices which use quantum entanglement among nuclear spins to defeat the Heisenberg limits: (1) a spin gyroscope that operates by detecting the frequency shift [...]

Impedance Characterization of Dielectric and Semiconducting Materials with Organic Capacitors for Organic Transistors

Li C.M., Pan L.K., Sun C.Q., Zhang J., Gamota D., Nanyang Technological University, SG

Characterization of the properties of OFET materials and devices have been conducted by I-V or C-V curves that used in MOS devices for provide information of basic shape, threshold voltage, mobility effects, velocity saturation, scaling, [...]

Low Temperature Volatile-Organic-Compound (VOC) Sensor Based on Tungsten Oxide Nanorods

Kim Y-S, Kim Y.T., Kim Y-S, Kim Y.T., Lee K., Electronics and Telecommunications Research Institute (ETRI), KR

Tungsten oxide sensors were fabricated by using highly crystalline and homogeneous WO2.72 nanorods, previously synthesized and characterized with average 75-nm length and 4-nm diameter [1]. They provide unique opportunities for investigating the effects of size-controlled [...]

Tunable Wideband Microwave Band-Stop and Band-Pass Filters Using YIG/GGG-GaAs Layer Structures

Tsai C.S., Qiu G., Gao H., Li G.P., Yang L.W., Nikitov S.A., University of California Irvine, US

Future wideband communication and radar systems require high-speed electronically-tuned wideband microwave band-stop and band-pass filters. Ferromagnetic resonance (FMR)-based microwave devices possess the unique capability of high-speed electronic tunability, using magnetic field, for very high carrier [...]

CMOS Architectures for NOR & NAND Logic Gates Using Single Electron Transistors

Venkataratnam A., Goel A.K., Michigan Technological University, US

Single electron transistor is one of the nano devices suitable for developing nano-scale logic circuits. In this paper, CMOS architectures for NOR and NAND gates have been proposed and their operational characteristics have been verified [...]

Two-Dimensional Simulation of Tunneling Using Quantum Lattice-Gas Automata

Sakai A., Kamakura Y., Taniguchi K., Osaka University, JP

We present the two-dimensional simulation of quantum tunneling considering the rough surface. It is demonstrated that the electron transmission through the potential barrier is significantly affected by the surface roughness pattern even if the same [...]

Application-specific Molecular Logic Systems

Zgol M., Wright R.G., Adebimpe D., Callinan T., GMA Industries, Inc., US

This paper describes progress in the development efforts in creation of organic-based molecular equivalents of the legacy systems in todays aircraft and aircraft systems. Utilizing advances in nanoassembly methodologies, including electromagnetic field-based manipulation techniques and [...]

Construction and Electrical Characterization of 0.9 nm Tall Channels Made via Pyryl Phosphonic Acid (PYPA) Self-assembly

Dong J., Parviz B.A., Yip H.L., Ma H., Jen A.K-Y., University of Washington, US

Molecular self-assembly can yield well-defined systems for charge carrier transport for the construction of a variety of devices such as field effect transistors and biosensors. We report a simple method to create an extremely confined [...]

Molecular Nanocluster Electronics: Organized Superstructures at Nanoscale and New Functional Nanomaterials

Kislov V., Gulyaev Yu., Medvedev B., Taranov I., Kolesov V., Kashin V., Gubin S., Khomutov G., Soldatov E., Artemiev M., Gurevich S., Russian Academy of Sciences, RU

This work is a result of a coherent effort of a consortium of Russian research groups in Nanotechnology (INTC - Interdisciplinary Nanotechnology Consortium) aimed at creating molecular electronic devices based on individual and collective properties [...]

The Computational Abilities of Random Magnetic Structures

Thenappan P., Madala S., Lusth J.C., University of Arkansas, US

In this paper, we investigate the computational abilities of random magnetic structures. Magnetic Quantum-dot Cellular Automata have the following advantages. They are simpler to fabricate and inputs are easier to control during computations. However, we [...]

Bayesian Modeling of Quantum-Dot Cellular Automata Circuits

Bhanja S., Srivastava S.N., University of South Florida, US

The goal of this work is to develop a fast, Bayesian Probabilistic Computing model [1], [2] that exploits the induced causality of clocking to arrive at a model with the minimum possible complexity. The probabilities [...]

Novel Nonvolatile Logic Circuits with Three-Dimensionally Stacked Nanoscale Memory Device

Abe K., Fujita S., Lee T.H., Toshiba Corporation, JP

Various emerging memories have been proposed for ultra high-density memory, such as phase change memory, organic memory or resistive memory. However, the potential of the emerging memories is not limited to RAM only. We have [...]

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