In this talk, we report the first experimental demonstration of InAlAs/InGaAs planar tunneling-coupled transistors at room temperature, in which tunneling characteristics such as negative differential resistance (NDR) and peak current are controlled with high gain [...]
We devised a method, named as scanned electrospinning technique, to form a variety of one-dimensional polymeric nanostructures. It is a straightforward technique that enables the rapid fabrication of oriented polymeric nanowires as well as their [...]
The technology expected after the lithography limit to keep increasing the number of transistors is thought to be either use of new transistors such as CNT by bottom-up process or three-dimensional (3D) architecture. We have [...]
Recently, many types of vertically aligned slender nanostructures, such as nanotubes and nanorods have been fabricated for use in biosensors development because of their increased surface area. Lately, evidence has emerged to reveal that these [...]
, Leahy R.W.
, Lipson S.M.
, Blau W.J.
, Dillon F.C.
, Spalding T.R.
, Morris M.A.
, Holmes J.D.
, Allan G.
, Patterson J.
, Trinity College Dublin, IE
The investigation aims at growing carbon nanotubes of controlled diameter from inside pores of ceramic materials. The resulting carbon nanotubes will then be used in electrons as thermally conductive substrates in die mountings.
We report on the fabrication of GaAs/AlGaAs core-shell nanowires (NWs) and AlGaAs nanotubes by SA-MOVPE and their photoluminescence characterization. The fabrication started from a preparation of patterned GaAs (111) B substrates partially covered with SiO2 [...]
In order to understand the operation of any type of semiconductor device, one must consider the effects of scattering. For many years, Monte Carlo has been the workhorse that has yielded great insight into the [...]
In this paper we report chemical synthesis, device fabrication, and device physics investigation of 1-D single-crystalline nanowire field-effect transistor (SNW-FET) for logic and memory applications. Wafer-scale transistor arrays were fabricated with semiconducting nanowires serve as [...]
Electronics based on carbon nanotubes (CNT) has received a lot of attention recently because of its tremendous application potential, such as active components and interconnects in nanochips, nanoelectromechanical systems (NEMS), display devices, and chemical and [...]
We present simulations of quantum wires and quantum point contacts (QPCs) formed in semiconductor heterostructures. Conductance measurements for such structures is quantized with plateaus at integer multiples of G_0= (2e^2/h) as function of gate voltage, [...]
In this study, we propose a new DRAM cell that uses a silicon-wire pass transistor stacked on top of a high-dielectric capacitor rated of holding industry-standard 32 fCoulomb charge. We show that the performance of [...]
We report electrochemical growth of nanowire sensors using e-beam patterned electrolyte channels, potentially enabling the controlled fabrication of individually addressable arrays. The electrodeposition technique results in nanowires with controlled dimensions, positions, alignments, and chemical compositions. [...]
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics