Vertically grown carbon nanotubes have the potential for tera-level Integration. However, the well-known ambipolar behavior limits the performance of carbon nanotube field effect transistors. In this work we demonstrate that a double gate structure effectively suppresses the ambipolar behavior. Using the double gate design excellent device characteristics along with the potential for high scale integration are achieved, which are necessary for future nanoelectronic applications.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 128 - 131
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topicss: Carbon Nano Structures & Devices, Nanoelectronics