Influence of Si Nanocrystal Distribution on Electrical Characteristics of MOS Structures

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In this work, Si nanocrystals with different distributions were embedded in the gate oxide with ion implantation technique. C-V and time-domain capacitance measurements were conducted to study the electrical characteristics of MOS structures. It is observed that charge trapping in nc-Si with different distributions in the gate oxide leads to different behaviors in MOS electrical characteristics.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 146 - 149
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Carbon Nano Structures & Devices, Nanoelectronics
ISBN: 0-9767985-2-2