Ng C.Y. – TechConnect Briefs

A Hybrid Process Design Kit: Towards Integrating CMOS and III-V Devices

Chiah S.B., Zhou X., Lee K.E.K., Ng C.Y., Antoniadis D., Fitzgerald E.A., Nanyang Technological University, SG

A hybrid process design kit (PDK) for novel integrated circuits incorporating high performance compound semiconductor materials and devices into existing production Si-CMOS compatible foundry process is presented. The hybrid PDK permits direct integration of Au-free [...]

Instability in flatband votlage of SiO2 embedded with silicon nanocrystals

Ng C.Y., Wong J.I., Yang M., Chen T.P., Nanyang Technological University, SG

In this work, the stability of the flatband voltage due to the Si-ions implantation into the SiO2 and subsequent annealing is being studied. There are lack of study on the impact of different annealing temperature [...]

Static dielectric constant of SiO2 embedded with silicon nanocrystals

Ng C.Y., Yang M., Wong J.I., Chen T.P., Nanyang Technological University, SG

The static dielectric constant of isolated silicon nanocrystal (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell-Garnett effective medium approximation and the Stopping [...]

Influence of Si Nanocrystal Distribution on Electrical Characteristics of MOS Structures

Liu Y., Chen T.P., Ng C.Y., Ding L., Nanyang Technological University, SG

In this work, Si nanocrystals with different distributions were embedded in the gate oxide with ion implantation technique. C-V and time-domain capacitance measurements were conducted to study the electrical characteristics of MOS structures. It is [...]

Charge Trapping and Charge Decay in Silicon Nanocrystals

Ng C.Y., Ding L., Chen T.P., Nanyang Technological University, SG

For applications of silicon nanocrystals in memory device, it is necessary to understand the discharging behaviors of the nanocrystals as the data endurance in memory and decay constant are important parameters to be measured. In [...]