Two-Dimensional Simulation of Tunneling Using Quantum Lattice-Gas Automata

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We present the two-dimensional simulation of quantum tunneling considering the rough surface. It is demonstrated that the electron transmission through the potential barrier is significantly affected by the surface roughness pattern even if the same roughness parameter is assumed. We consider that the variation of the $T$ depending on the surface roughness patterns would become one of the source of the device fluctuation in the agressively scaled MOSFETs.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 180 - 183
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Carbon Nano Structures & Devices, Nanoelectronics
ISBN: 0-9767985-2-2