Papers – Page 3 – TechConnect Briefs

RF Noise Models of MOSFETs- A Review

Asgaran S., Jamal Deen M., McMaster University, CA

A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal noise modeling is presented. Although the modeling of MOSFET noise dates back to many years ago, the enhanced noise generated [...]

Advanced MOSFET Modeling for RF IC Design

Cheng Y., Skyworks Solutions, US

In this paper, advanced MOSFET modeling for radiofrequency (RF) integrated-circuit (IC) design is discussed. An introduction of the basics of RF modeling of MOSFET is given first. A simple sub-circuit model is then presented with [...]

R3, an Accurate JFET and 3-Terminal Diffused Resistor Model

McAndrew C., Motorola, US

This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived [...]

Modeling and Characterization of Wire Inductance for High Speed VLSI Design

Arora N.D., Song L., Cadence Design Systems, US

Ever increasing circuit density, operating speed, faster on-chip rise times, use of low resistance Copper (Cu) interconnects, and longer wire lengths due to high level of integration in VLSI chip designs, have necessitated the need [...]

Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

Zhou X., Chiah S.B., Chandrasekaran K., Lim K.Y., Chan L., Chandrasekaran K., Chu S., Nanyang Technological University, SG

This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, [...]

The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation

Xi X., He J., Heyderi B., Dunga M., Lin C.H., Heyderi B., Wan H., Chan M., Niknejad A.M., Hu C., University of California at Berkeley, US

This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based [...]

Month: May 2005

RF Noise Models of MOSFETs- A Review

Advanced MOSFET Modeling for RF IC Design

R3, an Accurate JFET and 3-Terminal Diffused Resistor Model

Modeling and Characterization of Wire Inductance for High Speed VLSI Design

Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation

Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description

Recent Enhancements of MOS Model 11

Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects

Technology Limits and Compact Model for SiGe Scaled FETs