Papers – Page 2 – TechConnect Briefs

An Advanced Surface-Potential-Plus MOSFET Model

He J., Xi X., Chan M., Niknejad A., Hu C., University of California at Berkeley, US

Like other surface-potential based model, our surface-potential-plus model starts with charge-sheet approximation, uses the quasi-Fermi-potential to integrate drift and diffusion current and formulates an inversion charge equation that can be analytically solved for given terminal [...]

HiSIM: Accurate Charge Modeling Important for RF Era

Miura-Mattausch M., Navarro D., Ueno H., Mattausch H.J., Miura-Mattausch M., Morikawa K., Itoh S., Kobayashi A., Masuda H., Hiroshima University, JP

Extension of the gradual-channel approximation is presented with the surface-potential-based MOSFET modeling. All phenomena observed under the saturation condition are described by the potential increase in the pinch-off region in a self-consistent way. The charge [...]

Theory, Development and Applications of the Advanced Compact MOSFET (ACM) Model

Galup-Montoro C., Schneider M.C., Cunha A.I.A., Gouveia-Filho O.C., Universidade Federal de Santa Catarina, BR

This paper presents a physics-based advanced compact MOSFET (ACM) model. The ACM model is composed of very simple expressions, valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. We [...]

USIM Design Considerations

Bell A., Singhal K., Gummel H., Agere Systems, US

Compact models need to be carefully designed to predict circuit behavior efficiently, accurately and robustly. A variety of effects must work together and be consistently integrated into the model equations with redundancy. USIM is a [...]

A Basic Property of MOS Transistors and its Circuit Implications

Vittoz E., Enz C., Krummenacher F., Swiss Center for Electronics & Microtechnology, CH

The MOS transistor drain current is the (linear) superposition of independent and symmetrical effects of source and drain voltages. This basic property is not affected by the geometry or symmetry of the transistor, by the [...]

Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack

Dutton R.W., Choi C-H, Stanford University, US

Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leady MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on [...]

Floating Gate Devices: Operation and Compact Modeling

Pavan P., Larcher L., Marmiroli A., Università di Modena e Reggio Emilia, IT

This paper describes a possible approach to Compact Modeling of Floating Gate devices. Floating Gate devices are the basic building blocks of Semiconductor Nonvolatile Memories (EPROM, EEPROM, Flash). Among these, Flash are the most innovative [...]

Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs

Chen Q., Wang L., Murali R., Meindl J.D., Georgia Institute of Technology, US

Compact, physics-based models of subthreshold swing and threshold voltage are presented for double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes. Applying these device models, threshold voltage variations in DG MOSFETs are comprehensively and exhaustively [...]

Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]

Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

Tran H., Schroter M., University of Technology Dresden, DE

An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the [...]