Zhou X., Chiah S.B., Chandrasekaran K., Lim K.Y., Chan L., Chandrasekaran K., Chu S.
Nanyang Technological University, SG
Keywords: charge-based model, compact model, deep-submicron MOSFET, poly-depletion, symmetry, Xsim
This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, charge-based AC model fully consistent with DC without the need for C -V data, and inclusion of polydepletion effect for both DC and AC models.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 237 - 242
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling
ISBN: 0-9767985-3-0