nanowire – TechConnect Briefs

Titanate TiO2 Nanowire Bio-Scaffold as a Novel Sensor for Cancer Cell Differentiation

Alismail H., University of Arkansas, US

Human body cells undergo continuous division to compensate the cell loss in the body. This process is highly regulated and any abnormality can cause Cancer, which is a hot topic nowadays. Indeed, Cancer cell research [...]

Characteristic Fluctuation of Gate-All-Around Silicon Nanowire MOSFETs Induced by Random Discrete Dopants from Source/Drain Extensions

Sung W-L., National Chiao Tung University, TW

In this study, we explore characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants (RDDs) resulting from source/drain extensions. Compared with the results of source extension, asymmetric variations of characteristics induced by [...]

Two-step approach for the nanofabrication of highly ordered ultra-long porous gold nanowires with an adjustable porosity for SERS-based sensors

Chauvin A., Delacôte C., Molina-Luna L., Boujtita M., Thiry D., Du K., Ding J., Choi C-H, Humbert B., Mevellec J.-Y., Tessier P.-Y., El Mel A.-A., Institut des matériaux Jean Rouxel, FR

Recently, nanoporous gold has been pointed out as a promising candidate for the development of SERS-based sensors for the detection of environmental toxins and small molecules [1]. One way to improve the detection ability of [...]

Random Dopant Fluctuation in 10-nm-Gate Multi-Channel Gate-All-Around Nanowire Field Effect Transistors

Chang H-T, Li Y., National Chiao Tung University, TW

This paper, for the first time, studies the random dopant fluctuation (RDF) in the 10-nm-gate multi-channel gate-all-around nanowire field-effect transistors (FETs). To characterize device’s physical and electrical characteristic fluctuation, a 3D statistically atomistic approach to [...]

Silicon Nanowire Metal-Oxide-Semiconductor Field Effect Transistor NBTI Effect Modeling and Application in Circuit Performance Simulation

Ma C., He J., He Q., Chan M., Du C., He J., He Q., Ye Y., Zhao W., Wu W., Zhang X., Wang W., PKU-HKUST Shenzhen-Hongkong Institution, CN

A Negative Bias Temperature Instability (NBTI) model for the P-typed Silicon based nanowire MOS field effect transistor (SNWFET) and its application in the circuit simulation is studied in this paper. The model is derived from [...]

Chemiresistive hydrogen (H2) gas sensor based on viral-templated Pd nanowires

Moon C.H., Yan Y., Zhang M., Myung N.V., Haberer E.D., University of California Riverside, US

Palladium (Pd) has been widely used for H2 sensing applications because it readily forms a solid solution with hydrogen, modifying electrical resistance. Because the resistance change is diffusion-limited, Pd nanostructured materials with large surface area [...]

Local Synthesis of CuO Nanowires on CMOS Microhotplates for Gas Sensing Applications

Steinhauer S., Maier T., Mutinati G.C., Rohracher K., Siegert J., Schrank F., Koeck A., Materials Center Leoben Forschung GmbH, AT

CuO nanowires are locally synthesized on CMOS microhotplates leading to the realization of functional gas sensing devices. Only approximately 20mW are needed in order to heat the CMOS microhotplates to a temperature around 350°C, which [...]

Copper Oxide–Cobalt Oxide Nanoscale Heterostructures for Photocatalysis

Shi W., Chopra N., The University of Alabama, US

The research work discussed here will be focused on development of multifunctional nanoscale heterostructured photocatalysts comprised of oxides of copper and cobalt. Two fabrication approaches are described: a) solution and b) dry processing route. The [...]

Junctionless Nanowire MOSFET with Dynamic Threshold Voltage Operation Methodology

Mei J., Zhang A., Yu C., Ye Y., Wang H., Deng W., He J., PKU-HKUST Shenzhen-Hongkong Institution, CN

In this paper, a junctionless nanowire MOSFET with the dynamic threshold voltage operation methodology （DT-JNT） is proposed and its characteristics are studied comparing with those of a conventional junctionless nanowire transistor (JNT) and a double-gate [...]

Numerical Study on Gate-All-Around Tunneling FET with SiO2 Core and Si Shell Structure

Zhang A., Zhang L., Zhang X., Zhang A., Zhang L., Zhang X., Mei J., Zhang A., Zhang L., Zhang X., He H., He J., He H., He J., Chan M., PKU-HKUST Shenzhen-Hongkong Institution, CN

This work presents a gate-all-around tunneling FET based on SiO2 core and Si shell structure (GAA-SOI-TFET) and demonstrates its performance characteristics via the numerical simulation method. The 3-D T-CAD numerical simulations demonstrate that this new [...]