This paper, for the first time, studies the random dopant fluctuation (RDF) in the 10-nm-gate multi-channel gate-all-around nanowire field-effect transistors (FETs). To characterize device’s physical and electrical characteristic fluctuation, a 3D statistically atomistic approach to analyzing random-dopant effects is intensively performed. The key findings of this study indicate an ellipse-shaped gate-all-around nanowire FETs with relatively smaller aspect ratio possess better DC characteristic and good immunity to threshold voltage variability.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2014: Electronics, Manufacturing, Environment, Energy & Water
Published: June 15, 2014
Pages: 5 - 8
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Printed & Flexible Electronics