Obtaining an accurate although computationally efficient analytic solution for surface potential is the key step towards developing compact model for Low Effective Mass channel material Common Double Gate (CDG) MOSFETs . In our previous work [...]
We study distance-dependent mismatch and spatial correlation problems both experimentally and theoretically. The two problems are intimately connected. We present our hardware results and, using the relationship between mismatch and correlation, show that the relationship [...]
Artificial intelligence has come to its new era with the fast growth of machine learning algorithm. However, the conventional Von-Neumann architecture could consume excessive energy during the training process. At this moment, the memristor sheds [...]
HEMTs based on GaN have become immensely ubiquitous in the past decade and offer a strong competition to mature technologies like silicon primarily due to the superior characteristics offered by the GaN material system over [...]
SiC-based Junction Barrier Schottky (JBS) Diode is employed in power conversion applications because of its low-leakage current and high switching speed characteristics even at elevated temperatures. JBS structure originates from Schottky Barrier Diode (SBD) structure, [...]
The end of bulk silicon-based transistor technology has often been predicted in the scientific and technical literature. As a result, many new channel materials (such as III-V semiconductors, 2D materials, nanowires and -tubes) and device [...]
, Chang H-L
, Chauhan Y.S.
, Duarte J.P.
, Hu C.
, Kushwaha P.
, Lin Y-K.
, Sachid A.
, Salahuddin S.
, University of California Berkeley USA, US
FinFET is in mass production for its capability of scaling below 20nm. Thin silicon Fin surrounded by gate provides a superior channel electrostatics resulting in higher on current (Ion) and better subthreshold swing. The same [...]
A turn‐on DC surface‐potential‐based drain current model for fully‐depleted polycrystalline silicon thin film transistors is developed based on the charge sheet model considering both deep and tail acceptor trap states in the grain boundary and [...]
In this paper, we present the design of a cascode GaN-HEMT (CGH) structure in the monolithic integration of III-V/Si fabrication platform to fabricate monolithic III-V/Si CGH structures on a single chip by using hybrid process [...]
Journal: TechConnect Briefs
Volume: 4, Informatics, Electronics and Microsystems: TechConnect Briefs 2018
Published: May 13, 2018
Industry sector: Sensors, MEMS, Electronics
Topics: WCM - Compact Modeling