WCM – Compact Modeling

Papers:

A Compact Model for SiC Junction Barrier Schottky Diode for High-Voltage and High-Temperature Applications

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SiC-based Junction Barrier Schottky (JBS) Diode is employed in power conversion applications because of its low-leakage current and high switching speed characteristics even at elevated temperatures. JBS structure originates from Schottky Barrier Diode (SBD) structure, [...]

Journal: TechConnect Briefs
Volume: 4, Informatics, Electronics and Microsystems: TechConnect Briefs 2018
Published: May 13, 2018
Industry sector: Sensors, MEMS, Electronics
Topics: WCM - Compact Modeling
ISBN: 978-0-9988782-1-8