Unified Compact Model for Gate All Around FETs- Nanosheets, Nanowires, Multi Bridge Channel MOSFETs
Agarwal, H., Chang, H-L, Chauhan, Y.S., Duarte, J.P., Hu, C., Kushwaha, P., Lin, Y-K., Sachid, A., Salahuddin, S., University of California Berkeley USA, US
FinFET is in mass production for its capability of scaling below 20nm. Thin silicon Fin surrounded by gate provides a superior channel electrostatics resulting in higher on current (Ion) and better subthreshold swing. The same [...]