A Compact Model for SiC Junction Barrier Schottky Diode for High-Voltage and High-Temperature Applications
Hara, M., Herrera, F., Kobayashi, J., Mattausch, H.J., Miura-Mattausch, M., Navarro, D., Takusagawa, M., Hiroshima University, JP
SiC-based Junction Barrier Schottky (JBS) Diode is employed in power conversion applications because of its low-leakage current and high switching speed characteristics even at elevated temperatures. JBS structure originates from Schottky Barrier Diode (SBD) structure, [...]