A Compact Model for SiC Junction Barrier Schottky Diode for High-Voltage and High-Temperature Applications

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SiC-based Junction Barrier Schottky (JBS) Diode is employed in power conversion applications because of its low-leakage current and high switching speed characteristics even at elevated temperatures. JBS structure originates from Schottky Barrier Diode (SBD) structure, with an addition of p+ implant to reduce the reverse current in SBD. In this work, we report a compact model developed for JBS. The model consists of the thermionic emission current occurring at the metal/SiC junction together and the resistive effects of the p+ implant in the lightly doped drift region of the diode. The developed model can calculate the voltage-current characteristics of JBS for varying geometries of the p+ implant by without introducing model parameters. Measured current characteristics is well- reproduced for varying temperatures. The model is also applicable for the SBD structure.

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Journal: TechConnect Briefs
Volume: 4, Informatics, Electronics and Microsystems: TechConnect Briefs 2018
Published: May 13, 2018
Pages: 240 - 243
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling
ISBN: 978-0-9988782-1-8