Papers:
Monte Carlo and Energy Balance Simulations of a Deep Sub-micrometer Conventional and Asymmetric MOSFET Device Structures
We have simulated a 100 nm assymetric MOSFET device structure using both the Silvaco ATLAS energy balance model and the in-house 2D Monte Carlo particle-based simulator. Our investigations show that the energy balance simulation results [...]
Single Transistor AND Gate
Double-gate SOI MOSFET structure opens the door for many novel devices by the coupling of the two gates. If the same voltage is applied to both gates, the depletion regions are equally partitioned. On the [...]
Simulation of Device-Structure Dependence of Surface-Related Kink Phenomena in GaAs FETs
Effects of surface states on the kink phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to impact ionization of holes and the following hole trapping [...]
Nanoscale Control of Light-induced Degradation in Amorphous Silicon
The major problem of amorphous silicon solar cell is the light-induced degration. A recent experiment shows that this problem may be solved by a CN treatment. In this paper, microscopic mechanism of this CN treatment [...]
Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon Emitter
Kunz V.D., de Groot C.H., Anteney I.M., Abdul-Rahim A.I., Hall S., Hemment P.L.F., Wang Y., Ashburn P., University of Southampton, UK
In SiGe HBTs high values of fT are achieved by using aggressive Ge profiles in the base. A side effect is very high gains, which can lead to a degradation of BVCEO. This paper investigates [...]
Lateral-Cavity Design for Long-Wavelength Vertical-Cavity Lasers
For more than a decade, long-wavelength vertical-cavity lasers (VCLs) for fiber-optic applications are subject of intense research efforts. GaAs-based VCLs emitting at shorter wavelength (0.85-micron) have been commercialized successfully, however, the challenge of transferring this [...]
Semi-Analytic Boltzmann Model for the Substrate Current of Short-Channel MOSFETs with Lightly Doped Drains
As MOSFET sizes have been reduced to nano-scale dimensions, existing models of device behavior, such as the drift diffusion equations, cease to be valid. In the nano domain, more fundamental equations, such as the Boltzmann [...]
Fullband Particle-based Simulation of Optical Excitation in Silicon Pin Diodes
Wigger-Aboud S., Saraniti M., Goodnick S., Brodschelm A., Leitenstorfer A., Rush Medical Center and Illinois Institute of Technology, US
A fullband particle-based simulator is used to model photo-generated electron-hole pairs in Si. This work is motivated by experimental measurements of optically excited Si pin diodes. Results will be compared qualitatively to investigate charge transport [...]
A Methodology of Field-Emission Modeling with Space-Charge Effects
In this paper, we present a methodology for modeling and simulating 3D field-emission devices (FED) with space-charge effect. This approach applies a boundary-element-method (BEM) electrostatics solver [1] and an adaptive explicit integrator. The space charge [...]
Coupled Multiphysics Modeling of Semiconductor Lasers
Comprehensive models of semiconductor lasers are required to predict realistic behavior of various laser devices for the spatially nonuniform gain that results due to current crowding. Nonuniform gain has visible effect on laser dynamics and [...]
A Study on Growth of Ultrathin Silicon Dioxide Films by Rapid Thermal Oxidation
Silicon dioxide thin films are the basic components for microelectronics and other micro technologies. As the size of the transistors and relevant micro devices shrinks for faster and smaller chips and other microsystems, growth of [...]
Optical Characteristics of InAs Quantum Dots influenced by AlGaAs/GaAs Superlattice Barriers
We investigated the effect of AlGaAs/GaAs superlattice barriers on the optical properties of InAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. The samples used in the present work were grown by molecular beam epitaxy [...]
An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution
We report on a new formulation for the description of hot electron tunneling through dielectrics. It is based on an expression which accounts for the non-Maxwellian shape of the electron energy distribution function (EED) and [...]
Carrier Transit Time Optimization of a High Speed Bipolar Transistor Using Numerical Device Simulation
The optimization of bipolar transistors for high speed applications requires knowing the trade-off between several competing factors, including emitter-base junction charging time, base transit time, base-collector capacitance, high injection degradation, and collector debiasing [1]. Numerical [...]
Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale PMOSFETs
Nguyen C.D., Jungemann C., Neihues B., Meinerzhagen B., Sedlmeir J., Molzer W., ITEM-University of Bremen, DE
In this work a quantum correction model for the hole inversion layer based on the Improved Modified Local Density Approximation (IMLDA) and a corresponding channel mobility model compatible to the IMLDA quantum corrected spatial p-density [...]
High Speed Extraction of Process Model Parameters for 70nm Technology using a Distributed Genetic Algorithm
In this paper, we show, for the first time, GA application to process model calibration. We propose a distributed GA based calibration technique combined with the traditional local optimization algorithm, which reduces time for calibration [...]
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Industry sector: Sensors, MEMS, Electronics
Topic: Nanoelectronics
ISBN: 0-9728422-1-7