Coupled Multiphysics Modeling of Semiconductor Lasers

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Comprehensive models of semiconductor lasers are required to predict realistic behavior of various laser devices for the spatially nonuniform gain that results due to current crowding. Nonuniform gain has visible effect on laser dynamics and parameters, like threshold gain. Consistent solution of coupled electrical, thermal, gain and optical problems was achieved by CFD-ACE+ integrated solver. Integration of multiphysics into a single computational environment allowed for high-efficiency, high-fidelity modeling of modern semiconductor lasers, including vertical-cavity surface-emitting lasers (VCSELs) and edge-emitting lasers (EELs). This paper shows for the first time a full self-consistent coupling of the most-advanced-physics models of spatially dependent current flow, temperature effects, gain, and optical modes development and competition. Three coupled modules: Semiconductor Device, Thermal, and Optics, of CFD-ACE+ general purpose multiphysics software, are used in the present study. The Semiconductor Device module solves electric model based on drift-diffusion (DD) equations for carrier densities and energy balance (EB) equations for carrier temperatures. It has many advanced capabilities required by VCSEL simulations, such as quantum well (QW), heterostructure interface, etc..

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 36 - 39
Industry sector: Sensors, MEMS, Electronics
Topic: Nanoelectronics
ISBN: 0-9728422-1-7