A fullband particle-based simulator is used to model photo-generated electron-hole pairs in Si. This work is motivated by experimental measurements of optically excited Si pin diodes. Results will be compared qualitatively to investigate charge transport behavior on ultra-short time scales.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 28 - 31
Industry sector: Sensors, MEMS, Electronics