Kunz V.D., de Groot C.H., Anteney I.M., Abdul-Rahim A.I., Hall S., Hemment P.L.F., Wang Y., Ashburn P.
University of Southampton, UK
Keywords: bipolar transistor, gain control, polySiGe emitter
In SiGe HBTs high values of fT are achieved by using aggressive Ge profiles in the base. A side effect is very high gains, which can lead to a degradation of BVCEO. This paper investigates Ge incorporation in polysilicon emitters to give gain control independent of the base Ge profile. A model is developed illustrating the reduced gain from Ge incorporation and increased gain from the interfacial oxide layer.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 16 - 19
Industry sector: Sensors, MEMS, Electronics
Topic: Nanoelectronics
ISBN: 0-9728422-1-7