Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale PMOSFETs
Jungemann C., Meinerzhagen B., Molzer W., Neihues B., Nguyen C.D., Sedlmeir J., ITEM-University of Bremen, DE
In this work a quantum correction model for the hole inversion layer based on the Improved Modified Local Density Approximation (IMLDA) and a corresponding channel mobility model compatible to the IMLDA quantum corrected spatial p-density [...]