We have simulated a 100 nm assymetric MOSFET device structure using both the Silvaco ATLAS energy balance model and the in-house 2D Monte Carlo particle-based simulator. Our investigations show that the energy balance simulation results for the drain current are strongly affected by the choice of the energy relaxation time. Another noteworthy result is that the energy balance model tends to underestimate both the velocity overshoot effect and the average electron energy. the conclusion of this work is that the Monte Carlo method is more reliable tool for predicting device parameters, as it does not rely on any choice of fitting parameters.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 1 - 4
Industry sector: Sensors, MEMS, Electronics